RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Crucial Technology BLS16G4D240FSE.16FD 16GB
Compare
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB vs Crucial Technology BLS16G4D240FSE.16FD 16GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Overall score
Crucial Technology BLS16G4D240FSE.16FD 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Report a bug
Faster reading speed, GB/s
3
16.1
Average value in the tests
Reasons to consider
Crucial Technology BLS16G4D240FSE.16FD 16GB
Report a bug
Below the latency in the PassMark tests, ns
22
65
Around -195% lower latency
Faster write speed, GB/s
8.3
1,592.0
Average value in the tests
Higher memory bandwidth, mbps
19200
5300
Around 3.62 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Crucial Technology BLS16G4D240FSE.16FD 16GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
65
22
Read speed, GB/s
3,580.8
16.1
Write speed, GB/s
1,592.0
8.3
Memory bandwidth, mbps
5300
19200
Other
Description
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
Timings / Clock speed
5-5-5-15 / 667 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
572
2646
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB RAM comparisons
Samsung M471B5773DH0-CK0 2GB
Kingston 99U5295-011.A00LF 2GB
Crucial Technology BLS16G4D240FSE.16FD 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Crucial Technology BLS16G4D240FSE.16FD 16GB
Samsung M393B5170FH0-CH9 4GB
Crucial Technology BLE8G4D36BEEAK.M8FE1 8GB
Kingston KVR16N11/8-SP 8GB
Essencore Limited KD48GU881-26N190A 8GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Crucial Technology BLM16G44C19U4B.M8FB1 16GB
Kingston 9905403-156.A00LF 2GB
Golden Empire CL15-15-15 D4-3000 8GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Crucial Technology CT8G4SFRA32A.M8FR 8GB
G Skill Intl F3-1333C9-4GIS 4GB
G Skill Intl F4-3600C14-16GTRG 16GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
InnoDisk Corporation 16GB
Mushkin 991679ES 996679ES 2GB
Kingston KHX21334D4/8G 8GB
Samsung M393B5170FH0-CK0 4GB
Kingston ACR32D4U2S1ME-8 8GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
Panram International Corporation R748G2133U2S 8GB
Apacer Technology 78.01G86.9H50C 1GB
Crucial Technology CT8G4SFS6266.M4FB 8GB
Smart Modular SG564568FG8N6KF-Z2 2GB
Samsung M471A5644EB0-CPB 2GB
Kingston KP223C-ELD 2GB
Crucial Technology BLE8G4D36BEEAK.M8FE1 8GB
Report a bug
×
Bug description
Source link