RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB
Compare
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Overall score
ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Report a bug
Below the latency in the PassMark tests, ns
24
37
Around 35% lower latency
Reasons to consider
ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB
Report a bug
Faster reading speed, GB/s
21.4
16
Average value in the tests
Faster write speed, GB/s
14.3
12.5
Average value in the tests
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
24
37
Read speed, GB/s
16.0
21.4
Write speed, GB/s
12.5
14.3
Memory bandwidth, mbps
19200
19200
Other
Description
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17
Timings / Clock speed
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2925
3448
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM comparisons
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB RAM comparisons
Corsair CMK64GX4M4K3733C17 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
SpecTek Incorporated ?????????????????? 2GB
Corsair CMU16GX4M2D3200C16 8GB
Corsair CMD8GX3M2A2933C12 4GB
G Skill Intl F4-3600C16-16GTZRC 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB
Samsung M395T2863QZ4-CF76 1GB
Crucial Technology CT16G4DFD8266.M16FJ 16GB
Ramaxel Technology RMR5030ME68F9F1600 4GB
Crucial Technology CT8G4DFS824A.M8FH 8GB
A-DATA Technology AD73I1C1674EV 4GB
Wilk Elektronik S.A. GR2133S464L15S/8G 8GB
Corsair CM3X8GA2400C11Y2R 8GB
Micron Technology 8ATF1G64HZ-2G6H1 8GB
Kingston 9965525-155.A00LF 8GB
Corsair CMD64GX4M4C3000C15 16GB
Kingston 99U5474-010.A00LF 2GB
Kingston XJV223-MIE-NX 16GB
Strontium EVMT8G1600U86S 8GB
Crucial Technology CT8G4SFS8213.M8FA 8GB
Samsung M386B4G70DM0-CMA4 32GB
Kingston HP37D4U1S8ME-16XR 16GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Kingston 9965690-002.A00G 8GB
Samsung M393B1K70CH0-CH9 8GB
G Skill Intl F4-3333C16-16GTZSW 16GB
Corsair CMSX8GX4M1A2400C16 8GB
Team Group Inc. DDR4 3600 8GB
Report a bug
×
Bug description
Source link