RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Micron Technology 18ASF1G72PDZ-2G6E1 8GB
Compare
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Micron Technology 18ASF1G72PDZ-2G6E1 8GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Overall score
Micron Technology 18ASF1G72PDZ-2G6E1 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Report a bug
Below the latency in the PassMark tests, ns
24
44
Around 45% lower latency
Faster reading speed, GB/s
16
10.6
Average value in the tests
Faster write speed, GB/s
12.5
8.8
Average value in the tests
Reasons to consider
Micron Technology 18ASF1G72PDZ-2G6E1 8GB
Report a bug
Higher memory bandwidth, mbps
21300
19200
Around 1.11 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Micron Technology 18ASF1G72PDZ-2G6E1 8GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
24
44
Read speed, GB/s
16.0
10.6
Write speed, GB/s
12.5
8.8
Memory bandwidth, mbps
19200
21300
Other
Description
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
Timings / Clock speed
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
2925
2374
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM comparisons
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
Micron Technology 18ASF1G72PDZ-2G6E1 8GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Micron Technology 18ASF1G72PDZ-2G6E1 8GB
Kingston ACR512X64D3S13C9G 4GB
G Skill Intl F4-3000C15-4GRR 4GB
Kingston 9965525-144.A00LF 8GB
Team Group Inc. DDR4 3000 4GB
Samsung M471B5673FH0-CH9 2GB
Crucial Technology CT8G4DFD824A.C16FE 8GB
Kingston 99U5584-004.A00LF 4GB
Teikon TMA851S6CJR6N-VKSC 4GB
PUSKILL DDR3 1600 8G 8GB
Kingston 9965669-008.A03G 16GB
Lexar Co Limited LD4AU016G-H3200GST 16GB
A-DATA Technology DDR4 2666 2OZ 4GB
Peak Electronics 256X64M-67E 2GB
V-Color Technology Inc. TL48G30S8KGRGB15 8GB
Nanya Technology M2F4GH64CB8HB6N-CG 4GB
Kingmax Semiconductor GSAF62F-D8---------- 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Avant Technology J642GU42J9266NF 16GB
Samsung M378B5273DH0-CH9 4GB
Corsair CMK64GX4M4C3000C15 16GB
Samsung M393B1G70BH0-CK0 8GB
Kingston 9965604-001.D00G 16GB
Kingston KHX3200C18D4/8G 8GB
Kingston KHX2133C13S4/8G 8GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
G Skill Intl F4-3000C15-8GTZB 8GB
Report a bug
×
Bug description
Source link