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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Micron Technology 18ASF1G72PDZ-2G6E1 8GB
Compare
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Micron Technology 18ASF1G72PDZ-2G6E1 8GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Overall score
Micron Technology 18ASF1G72PDZ-2G6E1 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
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Below the latency in the PassMark tests, ns
24
44
Around 45% lower latency
Faster reading speed, GB/s
16
10.6
Average value in the tests
Faster write speed, GB/s
12.5
8.8
Average value in the tests
Reasons to consider
Micron Technology 18ASF1G72PDZ-2G6E1 8GB
Report a bug
Higher memory bandwidth, mbps
21300
19200
Around 1.11 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Micron Technology 18ASF1G72PDZ-2G6E1 8GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
24
44
Read speed, GB/s
16.0
10.6
Write speed, GB/s
12.5
8.8
Memory bandwidth, mbps
19200
21300
Other
Description
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
Timings / Clock speed
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
2925
2374
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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RAM 2
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