RAM comparison Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Micron Technology 18ASF1G72PZ-2G3B1 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Micron Technology 18ASF1G72PZ-2G3B1 8GB

Overall score

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Overall score

Differences Specifications Comments

Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Below the latency in the PassMark tests, ns

24 45

Around 47% lower latency
Faster reading speed, GB/s

16 11.7

Average value in the tests
Faster write speed, GB/s

12.5 8.4

Average value in the tests
Higher memory bandwidth, mbps

19200 1900

Around 10.11% higher bandwidth

Reasons to consider
Micron Technology 18ASF1G72PZ-2G3B1 8GB

Complete list of technical specifications

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Micron Technology 18ASF1G72PZ-2G3B1 8GB

Main characteristics

Other

Description

PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 PC4-1900, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed

15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz no data
Ranking PassMark (The more the better)

2925 2387

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

CAS Latency (CL) *

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Absolute Latency

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