RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Micron Technology MTA8ATF1G64HZ-2G3A1 8GB
Compare
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Micron Technology MTA8ATF1G64HZ-2G3A1 8GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Overall score
Micron Technology MTA8ATF1G64HZ-2G3A1 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Report a bug
Below the latency in the PassMark tests, ns
24
25
Around 4% lower latency
Faster reading speed, GB/s
16
14.3
Average value in the tests
Faster write speed, GB/s
12.5
10.7
Average value in the tests
Reasons to consider
Micron Technology MTA8ATF1G64HZ-2G3A1 8GB
Report a bug
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Micron Technology MTA8ATF1G64HZ-2G3A1 8GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
24
25
Read speed, GB/s
16.0
14.3
Write speed, GB/s
12.5
10.7
Memory bandwidth, mbps
19200
19200
Other
Description
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
Timings / Clock speed
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2925
2583
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM comparisons
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
Micron Technology MTA8ATF1G64HZ-2G3A1 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BL16G32C16U4B.16FE 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Micron Technology MTA8ATF1G64HZ-2G3A1 8GB
Crucial Technology CT51264BA1339.C16F 4GB
G Skill Intl F4-3600C16-8GTZ 8GB
Crucial Technology CT25664AA800.M16FM 2GB
Kingston MSI21D4S15HAG/8G 8GB
Samsung M471B5674QH0-YK0 2GB
Corsair CMW64GX4M4K3600C18 16GB
Crucial Technology BLT16G4D30AETA.K16FB 16GB
Samsung M378A1G43EB1-CPB 8GB
Crucial Technology BLE4G3D1608DE1TX0. 4GB
Corsair CM4B8G2J3000K15K 8GB
Samsung M471B1G73QH0-YK0 8GB
Kingston 9905713-019.A00G 4GB
Corsair CMSO4GX3M1C1600C11 4GB
Corsair CMSO8GX3M1C1600C11 8GB
AMD R5S38G1601U2S 8GB
G Skill Intl F4-2400C15-8GFT 8GB
Kingston KVR533D2N4 512MB
Kingston KHX3200C20S4/16G 16GB
Crucial Technology BLE4G3D1608DE1TX0. 4GB
Crucial Technology BLS16G4D26BFSB.16FD 16GB
Kingmax Semiconductor FLFE85F-C8KL9 2GB
Crucial Technology CT4G4DFS8213.C8FBD1 4GB
AMD R5S38G1601U2S 8GB
Mushkin MRA4S320GJJM32G 32GB
SK Hynix HMT151R7TFR4C-H9 4GB
Hyundai Inc GP-GR26C16S8K1HU408 8GB
Report a bug
×
Bug description
Source link