RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Samsung M378A5143TB2-CTD 4GB
Compare
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Samsung M378A5143TB2-CTD 4GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Overall score
Samsung M378A5143TB2-CTD 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Report a bug
Below the latency in the PassMark tests, ns
24
76
Around 68% lower latency
Faster reading speed, GB/s
16
10.3
Average value in the tests
Faster write speed, GB/s
12.5
6.9
Average value in the tests
Reasons to consider
Samsung M378A5143TB2-CTD 4GB
Report a bug
Higher memory bandwidth, mbps
21300
19200
Around 1.11 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Samsung M378A5143TB2-CTD 4GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
24
76
Read speed, GB/s
16.0
10.3
Write speed, GB/s
12.5
6.9
Memory bandwidth, mbps
19200
21300
Other
Description
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
2925
1260
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM comparisons
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
Samsung M378A5143TB2-CTD 4GB RAM comparisons
Samsung M393B2G70BH0-CK0 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Samsung M378A5143TB2-CTD 4GB
Samsung M391B5673EH1-CH9 2GB
Samsung M393A8K40B21-CTC 64GB
Samsung M378B5673EH1-CF8 2GB
Micron Technology 36ASF4G72LZ-2G3A1 32GB
Kingston KHX3200C18D4/8G 8GB
Apacer Technology 78.C1GS7.AUW0B 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-2400C15-16GFX 16GB
Kingston 99U5403-465.A00LF 8GB
Apacer Technology GD2.1831WS.001 16GB
Samsung M378B5173BH0-CH9 4GB
G Skill Intl F4-3000C15-4GVRB 4GB
Samsung M393B1K70QB0-CK0 8GB
Patriot Memory (PDP Systems) PSD44G240082 4GB
Apacer Technology 78.C1GET.9K10C 8GB
Mushkin MRA4S300GJJM16G 16GB
SK Hynix HMA82GS6JJR8N-VK 16GB
Corsair CMSX32GX4M2A2400C16 16GB
Kingston 99U5471-033.A00LF 4GB
G Skill Intl F4-2400C15-16GFXR 16GB
G Skill Intl F4-4000C14-16GTZR 16GB
Kingston 9905624-004.A00G 4GB
A-DATA Technology DQVE1908 512MB
Corsair CMK64GX4M8Z2933C16 8GB
SK Hynix HMA451U6AFR8N-TF 4GB
G Skill Intl F4-3000C16-16GISB 16GB
Report a bug
×
Bug description
Source link