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Kllisre 99P54280002.A00LF 8GB
Samsung M378A1K43BB1-CPB 8GB

Kllisre 99P54280002.A00LF 8GB vs Samsung M378A1K43BB1-CPB 8GB

Overall score
star star star star star
Kllisre 99P54280002.A00LF 8GB

Kllisre 99P54280002.A00LF 8GB

Overall score
star star star star star
Samsung M378A1K43BB1-CPB 8GB

Samsung M378A1K43BB1-CPB 8GB

Differences Specifications Comments

Differences

Kllisre 99P54280002.A00LF 8GB Reasons to consider
Kllisre 99P54280002.A00LF 8GB
Report a bug
  • Higher memory bandwidth, mbps
    21300 left arrow 17000
    Around 1.25% higher bandwidth
Samsung M378A1K43BB1-CPB 8GB Reasons to consider
Samsung M378A1K43BB1-CPB 8GB
Report a bug
  • Below the latency in the PassMark tests, ns
    35 left arrow 47
    Around -34% lower latency
  • Faster reading speed, GB/s
    14.9 left arrow 11.2
    Average value in the tests
  • Faster write speed, GB/s
    10.1 left arrow 8.4
    Average value in the tests

Specifications

Complete list of technical specifications
Kllisre 99P54280002.A00LF 8GB
Samsung M378A1K43BB1-CPB 8GB
Main characteristics
  • Memory type
    DDR4 left arrow DDR4
  • Latency in PassMark, ns
    47 left arrow 35
  • Read speed, GB/s
    11.2 left arrow 14.9
  • Write speed, GB/s
    8.4 left arrow 10.1
  • Memory bandwidth, mbps
    21300 left arrow 17000
Other
  • Description
    PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • Timings / Clock speed
    17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • Ranking PassMark (The more the better)
    2362 left arrow 2613

Kllisre 99P54280002.A00LF 8GB RAM comparisons

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Samsung M378A1K43BB1-CPB 8GB RAM comparisons

Samsung M378A1G43EB1-CPB 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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