RAM comparison Lexar Co Limited LD4AU016G-H3200GST 16GB vs Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N-VK 8GB

Lexar Co Limited LD4AU016G-H3200GST 16GB vs Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N-VK 8GB

Overall score

Lexar Co Limited LD4AU016G-H3200GST 16GB

Overall score

Differences Specifications Comments

Reasons to consider
Lexar Co Limited LD4AU016G-H3200GST 16GB

Faster reading speed, GB/s

17.8 15.3

Average value in the tests
Faster write speed, GB/s

12.5 11.2

Average value in the tests
Higher memory bandwidth, mbps

25600 21300

Around 1.2% higher bandwidth

Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N-VK 8GB

Complete list of technical specifications

Lexar Co Limited LD4AU016G-H3200GST 16GB

Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N-VK 8GB

Main characteristics

Other

Description

PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed

20-20-20, 22-22-22, 24-24-24 / 3200 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)

3285 2545

RAM Latency Calculator

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RAM 1

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RAM 2

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