RAM comparison Micron Technology 4ATF51264AZ-3G2E1 4GB vs Samsung M471A5244CB0-CTD 4GB

Micron Technology 4ATF51264AZ-3G2E1 4GB vs Samsung M471A5244CB0-CTD 4GB

Overall score

Micron Technology 4ATF51264AZ-3G2E1 4GB

Overall score

Differences Specifications Comments

Reasons to consider
Micron Technology 4ATF51264AZ-3G2E1 4GB

Faster reading speed, GB/s

17.5 15.5

Average value in the tests
Higher memory bandwidth, mbps

25600 21300

Around 1.2% higher bandwidth

Reasons to consider
Samsung M471A5244CB0-CTD 4GB

Complete list of technical specifications

Micron Technology 4ATF51264AZ-3G2E1 4GB

Samsung M471A5244CB0-CTD 4GB

Main characteristics

Other

Description

PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed

20-20-20, 22-22-22, 24-24-24 / 3200 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)

2196 2264

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns