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Micron Technology 8ATF51264AZ-2G1B1 4GB
Samsung M393A2G40EB1-CPB 16GB

Micron Technology 8ATF51264AZ-2G1B1 4GB vs Samsung M393A2G40EB1-CPB 16GB

Overall score
star star star star star
Micron Technology 8ATF51264AZ-2G1B1 4GB

Micron Technology 8ATF51264AZ-2G1B1 4GB

Overall score
star star star star star
Samsung M393A2G40EB1-CPB 16GB

Samsung M393A2G40EB1-CPB 16GB

Differences Specifications Comments

Differences

Micron Technology 8ATF51264AZ-2G1B1 4GB Reasons to consider
Micron Technology 8ATF51264AZ-2G1B1 4GB
Report a bug
  • Below the latency in the PassMark tests, ns
    29 left arrow 56
    Around 48% lower latency
  • Faster reading speed, GB/s
    15.8 left arrow 9.3
    Average value in the tests
  • Faster write speed, GB/s
    11.8 left arrow 7.7
    Average value in the tests
Samsung M393A2G40EB1-CPB 16GB Reasons to consider
Samsung M393A2G40EB1-CPB 16GB
Report a bug

Specifications

Complete list of technical specifications
Micron Technology 8ATF51264AZ-2G1B1 4GB
Samsung M393A2G40EB1-CPB 16GB
Main characteristics
  • Memory type
    DDR4 left arrow DDR4
  • Latency in PassMark, ns
    29 left arrow 56
  • Read speed, GB/s
    15.8 left arrow 9.3
  • Write speed, GB/s
    11.8 left arrow 7.7
  • Memory bandwidth, mbps
    17000 left arrow 17000
Other
  • Description
    PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • Timings / Clock speed
    14-14-14, 15-15-15, 16-16-16 / 2133 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • Ranking PassMark (The more the better)
    2711 left arrow 2200

Micron Technology 8ATF51264AZ-2G1B1 4GB RAM comparisons

Samsung M393B2G70BH0-CK0 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Samsung M393A2G40EB1-CPB 16GB RAM comparisons

Kingston 99U5403-036.A00G 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
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