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Nanya Technology M2N1G64TUH8D5F-AC 1GB
Samsung M393A2G40EB1-CPB 16GB
Compare
Nanya Technology M2N1G64TUH8D5F-AC 1GB vs Samsung M393A2G40EB1-CPB 16GB
Overall score
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Overall score
Samsung M393A2G40EB1-CPB 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Report a bug
Reasons to consider
Samsung M393A2G40EB1-CPB 16GB
Report a bug
Below the latency in the PassMark tests, ns
56
92
Around -64% lower latency
Faster reading speed, GB/s
9.3
2
Average value in the tests
Faster write speed, GB/s
7.7
1,266.1
Average value in the tests
Higher memory bandwidth, mbps
17000
6400
Around 2.66 higher bandwidth
Specifications
Complete list of technical specifications
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Samsung M393A2G40EB1-CPB 16GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
92
56
Read speed, GB/s
2,105.4
9.3
Write speed, GB/s
1,266.1
7.7
Memory bandwidth, mbps
6400
17000
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Clock speed
5-5-5-15 / 800 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
339
2200
Nanya Technology M2N1G64TUH8D5F-AC 1GB RAM comparisons
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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
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