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Nanya Technology M2Y51264TU88B0B-3C 512MB
Samsung V-GeN D4S4GL32A8TL 4GB

Nanya Technology M2Y51264TU88B0B-3C 512MB vs Samsung V-GeN D4S4GL32A8TL 4GB

Overall score
star star star star star
Nanya Technology M2Y51264TU88B0B-3C 512MB

Nanya Technology M2Y51264TU88B0B-3C 512MB

Overall score
star star star star star
Samsung V-GeN D4S4GL32A8TL 4GB

Samsung V-GeN D4S4GL32A8TL 4GB

Differences Specifications Comments

Differences

Nanya Technology M2Y51264TU88B0B-3C 512MB Reasons to consider
Nanya Technology M2Y51264TU88B0B-3C 512MB
Report a bug
  • Below the latency in the PassMark tests, ns
    54 left arrow 58
    Around 7% lower latency
  • Faster reading speed, GB/s
    3 left arrow 18.5
    Average value in the tests
Samsung V-GeN D4S4GL32A8TL 4GB Reasons to consider
Samsung V-GeN D4S4GL32A8TL 4GB
Report a bug
  • Faster write speed, GB/s
    9.5 left arrow 1,308.1
    Average value in the tests
  • Higher memory bandwidth, mbps
    19200 left arrow 5300
    Around 3.62 higher bandwidth

Specifications

Complete list of technical specifications
Nanya Technology M2Y51264TU88B0B-3C 512MB
Samsung V-GeN D4S4GL32A8TL 4GB
Main characteristics
  • Memory type
    DDR2 left arrow DDR4
  • Latency in PassMark, ns
    54 left arrow 58
  • Read speed, GB/s
    3,573.5 left arrow 18.5
  • Write speed, GB/s
    1,308.1 left arrow 9.5
  • Memory bandwidth, mbps
    5300 left arrow 19200
Other
  • Description
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • Timings / Clock speed
    5-5-5-15 / 667 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • Ranking PassMark (The more the better)
    371 left arrow 1998

Nanya Technology M2Y51264TU88B0B-3C 512MB RAM comparisons

Nanya Technology M2Y51264TU88B0B-37 512MB
Kingston KF3200C20S4/8G 8GB

Samsung V-GeN D4S4GL32A8TL 4GB RAM comparisons

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 99U5403-036.A00G 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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