RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Nanya Technology NT512T64U88B0BY-3C 512MB
Crucial Technology CT8G4DFD824A.C16FE 8GB
Compare
Nanya Technology NT512T64U88B0BY-3C 512MB vs Crucial Technology CT8G4DFD824A.C16FE 8GB
Overall score
Nanya Technology NT512T64U88B0BY-3C 512MB
Overall score
Crucial Technology CT8G4DFD824A.C16FE 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Nanya Technology NT512T64U88B0BY-3C 512MB
Report a bug
Faster reading speed, GB/s
2
17.7
Average value in the tests
Reasons to consider
Crucial Technology CT8G4DFD824A.C16FE 8GB
Report a bug
Below the latency in the PassMark tests, ns
27
71
Around -163% lower latency
Faster write speed, GB/s
13.5
1,322.6
Average value in the tests
Higher memory bandwidth, mbps
19200
5300
Around 3.62 higher bandwidth
Specifications
Complete list of technical specifications
Nanya Technology NT512T64U88B0BY-3C 512MB
Crucial Technology CT8G4DFD824A.C16FE 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
71
27
Read speed, GB/s
2,831.6
17.7
Write speed, GB/s
1,322.6
13.5
Memory bandwidth, mbps
5300
19200
Other
Description
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
Timings / Clock speed
5-5-5-15 / 667 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
399
3198
Nanya Technology NT512T64U88B0BY-3C 512MB RAM comparisons
Hynix Semiconductor (Hyundai Electronics) HYMP564U64EP8-S5 512MB
G Skill Intl F4-3200C16-16GTZSK 16GB
Crucial Technology CT8G4DFD824A.C16FE 8GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology CT51264BD1339.M16F 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Hexon Technology Pte Ltd HEXON 1GB
Corsair CMU32GX4M2C3200C16 16GB
Crucial Technology CT25664BA160B.C16F 2GB
Corsair CMWX8GD3600C18W4 8GB
Nanya Technology M2F4GH64CB8HB6N-CG 4GB
Kingston 9905625-065.A00G 16GB
Micron Technology 16JTF25664AZ-1G4F1 2GB
INTENSO 4GB
Samsung M378B5673EH1-CF8 2GB
Samsung M471A5143SB1-CRC 4GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
G Skill Intl F4-3200C16-8GVR 8GB
Kingston KHX1866C10D3/8GX 8GB
Micron Technology 16ATF4G64AZ-3G2E1 32GB
Kingston KF552C40-16 16GB
G Skill Intl F4-3600C14-16GTZR 16GB
Nanya Technology NT512T64U88B0BY-3C 512MB
Crucial Technology CT8G4DFD824A.C16FE 8GB
Micron Technology 18HTF12872AY-800F1 1GB
G Skill Intl F4-3200C16-16GVKA 16GB
A-DATA Technology AD73I1C1674EV 4GB
Kingston 9905630-052.A00G 16GB
Kingston ACR16D3LS1KNG/8G 8GB
Corsair CMR16GX4M2A2666C16 8GB
Kingston 99U5474-038.A00LF 4GB
SK Hynix HMAA1GS6CJR6N-XN 8GB
Kingston 99U5458-008.A00LF 4GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6JJR8N
Report a bug
×
Bug description
Source link