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PNY Electronics PNY 2GB
Micron Technology AFSD416ES1P 16GB
Compare
PNY Electronics PNY 2GB vs Micron Technology AFSD416ES1P 16GB
Overall score
PNY Electronics PNY 2GB
Overall score
Micron Technology AFSD416ES1P 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
PNY Electronics PNY 2GB
Report a bug
Reasons to consider
Micron Technology AFSD416ES1P 16GB
Report a bug
Below the latency in the PassMark tests, ns
25
27
Around -8% lower latency
Faster reading speed, GB/s
14.5
13.8
Average value in the tests
Faster write speed, GB/s
10.7
8.4
Average value in the tests
Higher memory bandwidth, mbps
19200
10600
Around 1.81 higher bandwidth
Specifications
Complete list of technical specifications
PNY Electronics PNY 2GB
Micron Technology AFSD416ES1P 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
27
25
Read speed, GB/s
13.8
14.5
Write speed, GB/s
8.4
10.7
Memory bandwidth, mbps
10600
19200
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 8 9
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
Timings / Clock speed
7-7-7-20 / 1333 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2274
2620
PNY Electronics PNY 2GB RAM comparisons
Kingston 9965426-130.A00LF 4GB
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Micron Technology AFSD416ES1P 16GB RAM comparisons
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
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Absolute Latency
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RAM 2
CAS Latency (CL) *
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calculate
Absolute Latency
0 ns
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