Samsung M3 78T2953EZ3-CF7 1GB
A-DATA Technology DQVE1A16 1GB

Samsung M3 78T2953EZ3-CF7 1GB vs A-DATA Technology DQVE1A16 1GB

Overall score
star star star star star
Samsung M3 78T2953EZ3-CF7 1GB

Samsung M3 78T2953EZ3-CF7 1GB

Overall score
star star star star star
A-DATA Technology DQVE1A16 1GB

A-DATA Technology DQVE1A16 1GB

Differences

  • Below the latency in the PassMark tests, ns
    58 left arrow 62
    Around 6% lower latency
  • Faster reading speed, GB/s
    4 left arrow 4
    Average value in the tests
  • Faster write speed, GB/s
    2,118.4 left arrow 1,950.7
    Average value in the tests

Specifications

Complete list of technical specifications
Samsung M3 78T2953EZ3-CF7 1GB
A-DATA Technology DQVE1A16 1GB
Main characteristics
  • Memory type
    DDR2 left arrow DDR2
  • Latency in PassMark, ns
    58 left arrow 62
  • Read speed, GB/s
    4,241.0 left arrow 4,172.1
  • Write speed, GB/s
    1,950.7 left arrow 2,118.4
  • Memory bandwidth, mbps
    6400 left arrow 6400
Other
  • Description
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5
  • Timings / Clock speed
    5-5-5-15 / 800 MHz left arrow 5-5-5-15 / 800 MHz
  • Ranking PassMark (The more the better)
    651 left arrow 753
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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