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Samsung M3 78T2953EZ3-CF7 1GB
A-DATA Technology DQVE1A16 1GB
Compare
Samsung M3 78T2953EZ3-CF7 1GB vs A-DATA Technology DQVE1A16 1GB
Overall score
Samsung M3 78T2953EZ3-CF7 1GB
Overall score
A-DATA Technology DQVE1A16 1GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M3 78T2953EZ3-CF7 1GB
Report a bug
Below the latency in the PassMark tests, ns
58
62
Around 6% lower latency
Faster reading speed, GB/s
4
4
Average value in the tests
Reasons to consider
A-DATA Technology DQVE1A16 1GB
Report a bug
Faster write speed, GB/s
2,118.4
1,950.7
Average value in the tests
Specifications
Complete list of technical specifications
Samsung M3 78T2953EZ3-CF7 1GB
A-DATA Technology DQVE1A16 1GB
Main characteristics
Memory type
DDR2
DDR2
Latency in PassMark, ns
58
62
Read speed, GB/s
4,241.0
4,172.1
Write speed, GB/s
1,950.7
2,118.4
Memory bandwidth, mbps
6400
6400
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5
Timings / Clock speed
5-5-5-15 / 800 MHz
5-5-5-15 / 800 MHz
Ranking PassMark (The more the better)
651
753
Samsung M3 78T2953EZ3-CF7 1GB RAM comparisons
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
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Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
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