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Samsung M3 78T3354BZ0-CCC 256MB
Galaxy Microsystems Ltd. GOC2017-Fugger 8GB
Compare
Samsung M3 78T3354BZ0-CCC 256MB vs Galaxy Microsystems Ltd. GOC2017-Fugger 8GB
Overall score
Samsung M3 78T3354BZ0-CCC 256MB
Overall score
Galaxy Microsystems Ltd. GOC2017-Fugger 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M3 78T3354BZ0-CCC 256MB
Report a bug
Below the latency in the PassMark tests, ns
46
52
Around 12% lower latency
Reasons to consider
Galaxy Microsystems Ltd. GOC2017-Fugger 8GB
Report a bug
Faster reading speed, GB/s
20.5
2
Average value in the tests
Faster write speed, GB/s
10.1
1,519.2
Average value in the tests
Higher memory bandwidth, mbps
17000
3200
Around 5.31 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M3 78T3354BZ0-CCC 256MB
Galaxy Microsystems Ltd. GOC2017-Fugger 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
46
52
Read speed, GB/s
2,909.8
20.5
Write speed, GB/s
1,519.2
10.1
Memory bandwidth, mbps
3200
17000
Other
Description
PC2-3200, SSTL 1.8V, CAS Supported: 3 4 5
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Clock speed
3-3-3-12 / 400 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
241
2472
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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Absolute Latency
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RAM 2
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