Samsung M3 78T3354BZ0-CCC 256MB vs Galaxy Microsystems Ltd. GOC2017-Fugger 8GB

总分

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

总分

Galaxy Microsystems Ltd. GOC2017-Fugger 8GB

Galaxy Microsystems Ltd. GOC2017-Fugger 8GB

差异规格评论

差异

Samsung M3 78T3354BZ0-CCC 256MB

需要考虑的原因
Samsung M3 78T3354BZ0-CCC 256MB

报告一个错误

低于PassMark测试中的延时，ns

46 52

左右 12% 更低的延时

Galaxy Microsystems Ltd. GOC2017-Fugger 8GB

需要考虑的原因
Galaxy Microsystems Ltd. GOC2017-Fugger 8GB

报告一个错误

更快的读取速度，GB/s

20.5 2

测试中的平均数值
更快的写入速度，GB/s

10.1 1,519.2

测试中的平均数值
更高的内存带宽，mbps

17000 3200

左右 5.31 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T3354BZ0-CCC 256MB

Galaxy Microsystems Ltd. GOC2017-Fugger 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

46 52
读取速度，GB/s

2,909.8 20.5
写入速度，GB/s

1,519.2 10.1
内存带宽，mbps

3200 17000

Other

描述

PC2-3200, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

3-3-3-12 / 400 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

241 2472

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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