RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M3 78T5663RZ3-CE6 2GB
Shenzhen Micro Innovation Industry PSD41626D19P1 16GB
Compare
Samsung M3 78T5663RZ3-CE6 2GB vs Shenzhen Micro Innovation Industry PSD41626D19P1 16GB
Overall score
Samsung M3 78T5663RZ3-CE6 2GB
Overall score
Shenzhen Micro Innovation Industry PSD41626D19P1 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M3 78T5663RZ3-CE6 2GB
Report a bug
Faster reading speed, GB/s
4
18.1
Average value in the tests
Faster write speed, GB/s
2,168.2
15.0
Average value in the tests
Reasons to consider
Shenzhen Micro Innovation Industry PSD41626D19P1 16GB
Report a bug
Below the latency in the PassMark tests, ns
23
60
Around -161% lower latency
Higher memory bandwidth, mbps
21300
5300
Around 4.02 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M3 78T5663RZ3-CE6 2GB
Shenzhen Micro Innovation Industry PSD41626D19P1 16GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
60
23
Read speed, GB/s
4,595.2
18.1
Write speed, GB/s
2,168.2
15.0
Memory bandwidth, mbps
5300
21300
Other
Description
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
5-5-5-15 / 667 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
941
3317
Samsung M3 78T5663RZ3-CE6 2GB RAM comparisons
Samsung M3 78T5663DZ3-CE6 2GB
Kingston 9965640-016.A00G 32GB
Shenzhen Micro Innovation Industry PSD41626D19P1 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905403-156.A00LF 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Avant Technology F6451U64F9333G 4GB
V-GEN D4H4GL26A8TS5 4GB
Kingston KVR800D2N6/2G 2GB
Samsung V-GeN D4S16GL32A8TS 16GB
Crucial Technology CT51264BD1339.M16F 4GB
Samsung M393A1G43DB1-CRC 8GB
Samsung M3 78T5663RZ3-CE6 2GB
Shenzhen Micro Innovation Industry PSD41626D19P1 16GB
Kingston KHX1600C9D3/8G 8GB
Corsair CMU16GX4M2D3200C16 8GB
Corsair CML16GX3M2A1600C10 8GB
G Skill Intl F4-3000C14-8GTZR 8GB
Kingston 99U5428-063.A00LF 8GB
Hoodisk Electronics Co Ltd GKE800UD102408-2666 8GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Crucial Technology CT16G4DFD8266.M16FH 16GB
Kingston 9905403-447.A00LF 4GB
Crucial Technology CT16G4DFD824A.M16FA 16GB
AMD R538G1601U2S 8GB
Kingston HP32D4U2S8MR-8 8GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
G Skill Intl F4-3600C19-16GSXWB 16GB
SK Hynix HMT41GU7BFR8A-PB 8GB
Apacer Technology D12.2356WS.001 8GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Corsair CMK16GX4M2Z2933C16 8GB
Smart Modular SF564128CJ8N6NNSEG 4GB
Corsair CMW64GX4M4C3466C16 16GB
Report a bug
×
Bug description
Source link