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Samsung M3 78T5663RZ3-CF7 2GB
SK Hynix V-GeN D4H4GL26A8TL5 4GB
Compare
Samsung M3 78T5663RZ3-CF7 2GB vs SK Hynix V-GeN D4H4GL26A8TL5 4GB
Overall score
Samsung M3 78T5663RZ3-CF7 2GB
Overall score
SK Hynix V-GeN D4H4GL26A8TL5 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M3 78T5663RZ3-CF7 2GB
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Faster reading speed, GB/s
4
17.7
Average value in the tests
Reasons to consider
SK Hynix V-GeN D4H4GL26A8TL5 4GB
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Below the latency in the PassMark tests, ns
58
65
Around -12% lower latency
Faster write speed, GB/s
9.3
2,784.6
Average value in the tests
Higher memory bandwidth, mbps
19200
6400
Around 3 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M3 78T5663RZ3-CF7 2GB
SK Hynix V-GeN D4H4GL26A8TL5 4GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
65
58
Read speed, GB/s
4,806.8
17.7
Write speed, GB/s
2,784.6
9.3
Memory bandwidth, mbps
6400
19200
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
5-5-5-15 / 800 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
932
1968
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
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Absolute Latency
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RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
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