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Samsung M3 78T6553CZ3-CD5 512MB
Chun Well Technology Holding Limited CL18-22-22 D4-3600 16GB
Compare
Samsung M3 78T6553CZ3-CD5 512MB vs Chun Well Technology Holding Limited CL18-22-22 D4-3600 16GB
Overall score
Samsung M3 78T6553CZ3-CD5 512MB
Overall score
Chun Well Technology Holding Limited CL18-22-22 D4-3600 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M3 78T6553CZ3-CD5 512MB
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Faster reading speed, GB/s
3
17.3
Average value in the tests
Reasons to consider
Chun Well Technology Holding Limited CL18-22-22 D4-3600 16GB
Report a bug
Below the latency in the PassMark tests, ns
34
56
Around -65% lower latency
Faster write speed, GB/s
14.5
1,501.2
Average value in the tests
Higher memory bandwidth, mbps
17000
4200
Around 4.05 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M3 78T6553CZ3-CD5 512MB
Chun Well Technology Holding Limited CL18-22-22 D4-3600 16GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
56
34
Read speed, GB/s
3,161.0
17.3
Write speed, GB/s
1,501.2
14.5
Memory bandwidth, mbps
4200
17000
Other
Description
PC2-4200, SSTL 1.8V, CAS Supported: 3 4 5
PC4-17000, 1.2V, CAS Supported: 14 15 16
Timings / Clock speed
4-4-4-12 / 533 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
381
3606
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
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Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
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