RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M3 93T5750CZA-CE6 2GB
Crucial Technology BLS8G4D26BFSCK.8FD 8GB
Compare
Samsung M3 93T5750CZA-CE6 2GB vs Crucial Technology BLS8G4D26BFSCK.8FD 8GB
Overall score
Samsung M3 93T5750CZA-CE6 2GB
Overall score
Crucial Technology BLS8G4D26BFSCK.8FD 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M3 93T5750CZA-CE6 2GB
Report a bug
Faster reading speed, GB/s
3
17
Average value in the tests
Faster write speed, GB/s
2,622.0
12.6
Average value in the tests
Reasons to consider
Crucial Technology BLS8G4D26BFSCK.8FD 8GB
Report a bug
Below the latency in the PassMark tests, ns
29
77
Around -166% lower latency
Higher memory bandwidth, mbps
21300
5300
Around 4.02 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M3 93T5750CZA-CE6 2GB
Crucial Technology BLS8G4D26BFSCK.8FD 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
77
29
Read speed, GB/s
3,405.2
17.0
Write speed, GB/s
2,622.0
12.6
Memory bandwidth, mbps
5300
21300
Other
Description
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
Timings / Clock speed
5-5-5-15 / 667 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
763
3140
Samsung M3 93T5750CZA-CE6 2GB RAM comparisons
takeMS International AG TMS2GB264D082805EQ 2GB
Southland Microsystems 40002105-01 2GB
Crucial Technology BLS8G4D26BFSCK.8FD 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M3 93T5750CZA-CE6 2GB
Crucial Technology BLS8G4D26BFSCK.8FD 8GB
Samsung M393B2G70BH0-CK0 16GB
SK Hynix HMAA4GS6MJR8N-VK 32GB
Nanya Technology NT2GC64B88B0NS-CG 2GB
Kingston SNY1600S11-4G-EDEG 4GB
Samsung M378B5273DH0-CH9 4GB
Corsair CMD16GX4M4A2800C16 4GB
Samsung M471B5273CH0-CH9 4GB
Hewlett-Packard 48U45AA# 16GB
Samsung M4 70T2864QZ3-CF7 1GB
Hynix Semiconductor (Hyundai Electronics) HMA451S6AFR8N
Corsair CMD16GX3M2A1866C9 8GB
Panram International Corporation W4N2666PS-16G 16GB
SK Hynix HYMP112U64CP8-S6 1GB
Corsair CMK32GX4M4B3466C16 8GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
G Skill Intl F4-3333C16-16GTZ 16GB
G Skill Intl F3-12800CL7-4GBXM 4GB
Kingston 9965643-002.A01G 4GB
Crucial Technology CT51264BA1339.C16F 4GB
INTENSO 4GB
Ramos Technology EWB8GB681CA3-16IC 8GB
G Skill Intl F4-3200C16-32GVK 32GB
A-DATA Technology DQKD1A08 1GB
G Skill Intl F4-3600C16-8GTZR 8GB
Corsair CM2X2048-6400C5 2GB
Crucial Technology CT8G4SFS8266.M8FD 8GB
Report a bug
×
Bug description
Source link