RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M3 93T5750CZA-CE6 2GB
Crucial Technology CT8G4SFD8213.C16FBD1 8GB
Compare
Samsung M3 93T5750CZA-CE6 2GB vs Crucial Technology CT8G4SFD8213.C16FBD1 8GB
Overall score
Samsung M3 93T5750CZA-CE6 2GB
Overall score
Crucial Technology CT8G4SFD8213.C16FBD1 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M3 93T5750CZA-CE6 2GB
Report a bug
Faster reading speed, GB/s
3
14
Average value in the tests
Faster write speed, GB/s
2,622.0
10.1
Average value in the tests
Reasons to consider
Crucial Technology CT8G4SFD8213.C16FBD1 8GB
Report a bug
Below the latency in the PassMark tests, ns
36
77
Around -114% lower latency
Higher memory bandwidth, mbps
17000
5300
Around 3.21 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M3 93T5750CZA-CE6 2GB
Crucial Technology CT8G4SFD8213.C16FBD1 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
77
36
Read speed, GB/s
3,405.2
14.0
Write speed, GB/s
2,622.0
10.1
Memory bandwidth, mbps
5300
17000
Other
Description
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19
Timings / Clock speed
5-5-5-15 / 667 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
763
2416
Samsung M3 93T5750CZA-CE6 2GB RAM comparisons
takeMS International AG TMS2GB264D082805EQ 2GB
Southland Microsystems 40002105-01 2GB
Crucial Technology CT8G4SFD8213.C16FBD1 8GB RAM comparisons
SK Hynix HYMP112U64CP8-S5 1GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M3 93T5750CZA-CE6 2GB
Crucial Technology CT8G4SFD8213.C16FBD1 8GB
Samsung M3 78T3354BZ0-CCC 256MB
Micron Technology 9ASF51272PZ-2G1B1 4GB
SK Hynix HYMP112U64CP8-S6 1GB
Corsair CMK16GX4M4B3300C16 4GB
Samsung M378B5673EH1-CF8 2GB
Corsair CMW64GX4M8C3200C16 8GB
AMD R5316G1609U2K 8GB
Crucial Technology CT8G4SFS8266.C8FD1 8GB
Samsung DDR3 8GB 1600MHz 8GB
Kingston X5H5PW-MIE 8GB
Elpida EBJ81UG8BBU0-GN-F 8GB
Samsung M391A2K43BB1-CPB 16GB
Crucial Technology CT51264BA1339.C16F 4GB
Micron Technology 16ATF4G64HZ-2G6B2 32GB
Kingston 9905471-001.A01LF 2GB
Micron Technology 16ATF1G64HZ-2G1B1 8GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
G Skill Intl F4-3000C15-8GVRB 8GB
takeMS International AG TMS2GB264D082-805G 2GB
AMD R7S48G2400U2S 8GB
Team Group Inc. UD5-6400 16GB
Atla Electronics Co. Ltd. AD4SST8GT1WB-FQGE 8GB
Ramaxel Technology RMT3020EC58E9F1333 4GB
Corsair CMK8GX4M2B3600C18 4GB
Crucial Technology CT51264BD1339.M16F 4GB
Patriot Memory (PDP Systems) 3400 C16 Series 8GB
Report a bug
×
Bug description
Source link