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Samsung M3 93T5750CZA-CE6 2GB
Micron Technology 4ATF51264HZ-2G6E3 4GB

Samsung M3 93T5750CZA-CE6 2GB vs Micron Technology 4ATF51264HZ-2G6E3 4GB

Overall score
star star star star star
Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

Overall score
star star star star star
Micron Technology 4ATF51264HZ-2G6E3 4GB

Micron Technology 4ATF51264HZ-2G6E3 4GB

Differences Specifications Comments

Differences

Samsung M3 93T5750CZA-CE6 2GB Reasons to consider
Samsung M3 93T5750CZA-CE6 2GB
Report a bug
  • Faster reading speed, GB/s
    3 left arrow 16.6
    Average value in the tests
  • Faster write speed, GB/s
    2,622.0 left arrow 12.5
    Average value in the tests
Micron Technology 4ATF51264HZ-2G6E3 4GB Reasons to consider
Micron Technology 4ATF51264HZ-2G6E3 4GB
Report a bug
  • Below the latency in the PassMark tests, ns
    31 left arrow 77
    Around -148% lower latency
  • Higher memory bandwidth, mbps
    21300 left arrow 5300
    Around 4.02 higher bandwidth

Specifications

Complete list of technical specifications
Samsung M3 93T5750CZA-CE6 2GB
Micron Technology 4ATF51264HZ-2G6E3 4GB
Main characteristics
  • Memory type
    DDR2 left arrow DDR4
  • Latency in PassMark, ns
    77 left arrow 31
  • Read speed, GB/s
    3,405.2 left arrow 16.6
  • Write speed, GB/s
    2,622.0 left arrow 12.5
  • Memory bandwidth, mbps
    5300 left arrow 21300
Other
  • Description
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
  • Timings / Clock speed
    5-5-5-15 / 667 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • Ranking PassMark (The more the better)
    763 left arrow 2605

Samsung M3 93T5750CZA-CE6 2GB RAM comparisons

takeMS International AG TMS2GB264D082805EQ 2GB
Southland Microsystems 40002105-01 2GB

Micron Technology 4ATF51264HZ-2G6E3 4GB RAM comparisons

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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Latest comparisons

Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
Micron Technology 4ATF51264HZ-2G6E3 4GB
Micron Technology 4ATF51264HZ-2G6E3 4GB
Memory RAM
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Crucial Technology BL16G36C16U4RL.M16FE 16GB
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Samsung M471B5273CH0-CH9 4GB
Samsung M471B5273CH0-CH9 4GB
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Crucial Technology CT8G4SFD8213.C16FADP 8GB
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Kingston KHX2800C14D4/8GX 8GB
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Corsair CM2X2048-6400C5 2GB
Corsair CM2X2048-6400C5 2GB
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Samsung M393B2G70BH0-CK0 16GB
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Micron Technology 8ATF2G64HZ-3G2E2 16GB
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TwinMOS 8DPT5MK8-TATP 2GB
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G Skill Intl F5-6400J3239G16G 16GB
G Skill Intl F5-6400J3239G16G 16GB
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Micron Technology 18ASF1G72PDZ-2G1A1 8GB
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Hewlett-Packard 7EH67AA# 8GB
Hewlett-Packard 7EH67AA# 8GB
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Samsung M393B1K70DH0-YK0 8GB
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