RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M3 93T5750CZA-CE6 2GB
SK Hynix HMA84GR7MFR4N-TF 32GB
Compare
Samsung M3 93T5750CZA-CE6 2GB vs SK Hynix HMA84GR7MFR4N-TF 32GB
Overall score
Samsung M3 93T5750CZA-CE6 2GB
Overall score
SK Hynix HMA84GR7MFR4N-TF 32GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M3 93T5750CZA-CE6 2GB
Report a bug
Reasons to consider
SK Hynix HMA84GR7MFR4N-TF 32GB
Report a bug
Below the latency in the PassMark tests, ns
57
77
Around -35% lower latency
Faster reading speed, GB/s
9.2
3
Average value in the tests
Faster write speed, GB/s
7.2
2,622.0
Average value in the tests
Higher memory bandwidth, mbps
17000
5300
Around 3.21 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M3 93T5750CZA-CE6 2GB
SK Hynix HMA84GR7MFR4N-TF 32GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
77
57
Read speed, GB/s
3,405.2
9.2
Write speed, GB/s
2,622.0
7.2
Memory bandwidth, mbps
5300
17000
Other
Description
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
Timings / Clock speed
5-5-5-15 / 667 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
763
2037
Samsung M3 93T5750CZA-CE6 2GB RAM comparisons
takeMS International AG TMS2GB264D082805EQ 2GB
Southland Microsystems 40002105-01 2GB
SK Hynix HMA84GR7MFR4N-TF 32GB RAM comparisons
Kingston 9905403-444.A00LF 4GB
Kingston 99U5403-036.A00G 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M378B5673EH1-CF8 2GB
Corsair CMK64GX4M4B3000C15 16GB
Samsung M471B5273DH0-CH9 4GB
Transcend Information TS1GLH64V4B 8GB
Kingston KHX318C10FR/8G 8GB
Hyundai Inc GP-GR26C16S8K1HU408 8GB
Kingston 9905471-006.A00LF 4GB
Micron Technology 9ASF1G72AZ-2G3B1 8GB
Samsung M393A1G40DB0-CPB 8GB
Crucial Technology BL16G32C16U4RL.M16FE 16GB
Samsung M378B5273CH0-CH9 4GB
Samsung M378B5273DH0-CH9 4GB
Samsung M3 78T5663RZ3-CF7 2GB
Kllisre D4 8G 8GB
Samsung M378B5673EH1-CF8 2GB
Crucial Technology BL16G26C16U4B.16FE 16GB
Samsung M471B5173DB0-YK0 4GB
JUHOR JHD2666U1908JG 8GB
Samsung M3 78T3354BZ0-CCC 256MB
Mushkin 99[2/7/4]192[F/T] 4GB
Samsung M378B5673FH0-CH9 2GB
Micron Technology 16ATF2G64AZ-3G2J1 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Wilk Elektronik S.A. IRX3200D464L16/16G 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
A-DATA Technology DDR4 2800 2OZ 4GB
Samsung M393B2G70BH0-CH9 16GB
Asgard VMA42UG-MEC1U2AW1 8GB
Report a bug
×
Bug description
Source link