RAM comparison Samsung M378A1G43DB0-CPB 8GB vs Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB

Samsung M378A1G43DB0-CPB 8GB vs Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB

Overall score

Samsung M378A1G43DB0-CPB 8GB

Overall score

Differences Specifications Comments

Reasons to consider
Samsung M378A1G43DB0-CPB 8GB

Reasons to consider
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB

Faster reading speed, GB/s

15.6 15

Average value in the tests
Higher memory bandwidth, mbps

21300 17000

Around 1.25 higher bandwidth

Complete list of technical specifications

Samsung M378A1G43DB0-CPB 8GB

Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB

Main characteristics

Other

Description

PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed

14-14-14, 15-15-15, 16-16-16 / 2133 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)

2569 1650

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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