Samsung M378A1G43DB0-CPB 8GB
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB

Samsung M378A1G43DB0-CPB 8GB vs Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB

Overall score
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Samsung M378A1G43DB0-CPB 8GB

Samsung M378A1G43DB0-CPB 8GB

Overall score
star star star star star
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB

Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB

Differences

  • Below the latency in the PassMark tests, ns
    36 left arrow 71
    Around 49% lower latency
  • Faster write speed, GB/s
    10.3 left arrow 6.4
    Average value in the tests
  • Faster reading speed, GB/s
    15.6 left arrow 15
    Average value in the tests
  • Higher memory bandwidth, mbps
    21300 left arrow 17000
    Around 1.25 higher bandwidth

Specifications

Complete list of technical specifications
Samsung M378A1G43DB0-CPB 8GB
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB
Main characteristics
  • Memory type
    DDR4 left arrow DDR4
  • Latency in PassMark, ns
    36 left arrow 71
  • Read speed, GB/s
    15.0 left arrow 15.6
  • Write speed, GB/s
    10.3 left arrow 6.4
  • Memory bandwidth, mbps
    17000 left arrow 21300
Other
  • Description
    PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • Timings / Clock speed
    14-14-14, 15-15-15, 16-16-16 / 2133 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • Ranking PassMark (The more the better)
    2569 left arrow 1650
RAM Latency Calculator
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