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Samsung M378A1K43EB2-CWE 8GB
Inmos + 256MB
Compare
Samsung M378A1K43EB2-CWE 8GB vs Inmos + 256MB
Overall score
Samsung M378A1K43EB2-CWE 8GB
Overall score
Inmos + 256MB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M378A1K43EB2-CWE 8GB
Report a bug
Faster reading speed, GB/s
17.6
11.5
Average value in the tests
Faster write speed, GB/s
12.0
9.1
Average value in the tests
Higher memory bandwidth, mbps
25600
16800
Around 1.52% higher bandwidth
Reasons to consider
Inmos + 256MB
Report a bug
Below the latency in the PassMark tests, ns
30
33
Around -10% lower latency
Specifications
Complete list of technical specifications
Samsung M378A1K43EB2-CWE 8GB
Inmos + 256MB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
33
30
Read speed, GB/s
17.6
11.5
Write speed, GB/s
12.0
9.1
Memory bandwidth, mbps
25600
16800
Other
Description
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
PC4-16800, TBD1 V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
Timings / Clock speed
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
no data
Ranking PassMark (The more the better)
2910
2318
Samsung M378A1K43EB2-CWE 8GB RAM comparisons
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Inmos + 256MB RAM comparisons
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
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