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Samsung M378A5244CB0-CTD 4GB
Micron Technology 4ATF1G64HZ-3G2E2 8GB

Samsung M378A5244CB0-CTD 4GB vs Micron Technology 4ATF1G64HZ-3G2E2 8GB

Overall score
star star star star star
Samsung M378A5244CB0-CTD 4GB

Samsung M378A5244CB0-CTD 4GB

Overall score
star star star star star
Micron Technology 4ATF1G64HZ-3G2E2 8GB

Micron Technology 4ATF1G64HZ-3G2E2 8GB

Differences Specifications Comments

Differences

Samsung M378A5244CB0-CTD 4GB Reasons to consider
Samsung M378A5244CB0-CTD 4GB
Report a bug
  • Below the latency in the PassMark tests, ns
    36 left arrow 49
    Around 27% lower latency
  • Faster write speed, GB/s
    11.8 left arrow 11.0
    Average value in the tests
Micron Technology 4ATF1G64HZ-3G2E2 8GB Reasons to consider
Micron Technology 4ATF1G64HZ-3G2E2 8GB
Report a bug
  • Higher memory bandwidth, mbps
    25600 left arrow 21300
    Around 1.2 higher bandwidth

Specifications

Complete list of technical specifications
Samsung M378A5244CB0-CTD 4GB
Micron Technology 4ATF1G64HZ-3G2E2 8GB
Main characteristics
  • Memory type
    DDR4 left arrow DDR4
  • Latency in PassMark, ns
    36 left arrow 49
  • Read speed, GB/s
    15.8 left arrow 15.8
  • Write speed, GB/s
    11.8 left arrow 11.0
  • Memory bandwidth, mbps
    21300 left arrow 25600
Other
  • Description
    PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
  • Timings / Clock speed
    17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • Ranking PassMark (The more the better)
    2497 left arrow 2534

Samsung M378A5244CB0-CTD 4GB RAM comparisons

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Apacer Technology AQD-D4U8GN24-SE 8GB

Micron Technology 4ATF1G64HZ-3G2E2 8GB RAM comparisons

Samsung M393B1K70CH0-CH9 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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