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Samsung M378B5173EB0-CK0 4GB
Kingston K6VDX7-HYD 8GB

Samsung M378B5173EB0-CK0 4GB vs Kingston K6VDX7-HYD 8GB

Overall score
star star star star star
Samsung M378B5173EB0-CK0 4GB

Samsung M378B5173EB0-CK0 4GB

Overall score
star star star star star
Kingston K6VDX7-HYD 8GB

Kingston K6VDX7-HYD 8GB

Differences Specifications Comments

Differences

Samsung M378B5173EB0-CK0 4GB Reasons to consider
Samsung M378B5173EB0-CK0 4GB
Report a bug
  • Faster reading speed, GB/s
    13.9 left arrow 13.5
    Average value in the tests
  • Faster write speed, GB/s
    8.1 left arrow 7.2
    Average value in the tests
Kingston K6VDX7-HYD 8GB Reasons to consider
Kingston K6VDX7-HYD 8GB
Report a bug
  • Below the latency in the PassMark tests, ns
    30 left arrow 42
    Around -40% lower latency
  • Higher memory bandwidth, mbps
    25600 left arrow 12800
    Around 2 higher bandwidth

Specifications

Complete list of technical specifications
Samsung M378B5173EB0-CK0 4GB
Kingston K6VDX7-HYD 8GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    42 left arrow 30
  • Read speed, GB/s
    13.9 left arrow 13.5
  • Write speed, GB/s
    8.1 left arrow 7.2
  • Memory bandwidth, mbps
    12800 left arrow 25600
Other
  • Description
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
  • Timings / Clock speed
    9-9-9-24 / 1600 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • Ranking PassMark (The more the better)
    2150 left arrow 2154

Samsung M378B5173EB0-CK0 4GB RAM comparisons

Crucial Technology CT51264BA1339.M16F 4GB
Essencore Limited KD48GU880-26N160T 8GB

Kingston K6VDX7-HYD 8GB RAM comparisons

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
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