Samsung M378B5173EB0-CK0 4GB vs Kingston K6VDX7-HYD 8GB

Punteggio complessivo

Samsung M378B5173EB0-CK0 4GB

Samsung M378B5173EB0-CK0 4GB

Punteggio complessivo

Kingston K6VDX7-HYD 8GB

Kingston K6VDX7-HYD 8GB

Differenze Specifiche tecniche Commenti

Differenze

Samsung M378B5173EB0-CK0 4GB

Motivi da considerare
Samsung M378B5173EB0-CK0 4GB

Velocità di lettura più elevata, GB/s

13.9 13.5

Valore medio nei test
Velocità di scrittura più elevata, GB/s

8.1 7.2

Valore medio nei test

Kingston K6VDX7-HYD 8GB

Motivi da considerare
Kingston K6VDX7-HYD 8GB

Al di sotto della latenza nei test PassMark, ns

30 42

Intorno -40% latenza inferiore
Larghezza di banda di memoria superiore, mbps

25600 12800

Intorno 2 larghezza di banda superiore

Specifiche tecniche

Elenco completo delle specifiche tecniche

Samsung M378B5173EB0-CK0 4GB

Kingston K6VDX7-HYD 8GB

Caratteristiche principali

Tipo di memoria

DDR3 DDR4
Latenza in PassMark, ns

42 30
Velocità di lettura, GB/s

13.9 13.5
Velocità di scrittura, GB/s

8.1 7.2
Larghezza di banda della memoria, mbps

12800 25600

Other

Descrizione

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
Temporizzazioni / Velocità di clock

9-9-9-24 / 1600 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
Classifica PassMark (più sono, meglio è)

2150 2154

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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