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Samsung M378B5673EH1-CF8 2GB
Micron Technology 36ASF2G72PZ-2G1A2 16GB
Compare
Samsung M378B5673EH1-CF8 2GB vs Micron Technology 36ASF2G72PZ-2G1A2 16GB
Overall score
Samsung M378B5673EH1-CF8 2GB
Overall score
Micron Technology 36ASF2G72PZ-2G1A2 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M378B5673EH1-CF8 2GB
Report a bug
Below the latency in the PassMark tests, ns
28
52
Around 46% lower latency
Faster reading speed, GB/s
12.7
10.2
Average value in the tests
Reasons to consider
Micron Technology 36ASF2G72PZ-2G1A2 16GB
Report a bug
Faster write speed, GB/s
8.2
7.5
Average value in the tests
Higher memory bandwidth, mbps
17500
8500
Around 2.06 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M378B5673EH1-CF8 2GB
Micron Technology 36ASF2G72PZ-2G1A2 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
28
52
Read speed, GB/s
12.7
10.2
Write speed, GB/s
7.5
8.2
Memory bandwidth, mbps
8500
17500
Other
Description
PC3-8500, 1.5V, CAS Supported: 6 7 8
PC4-17500, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
Timings / Clock speed
7-7-7-20 / 1066 MHz
no data
Ranking PassMark (The more the better)
1988
2319
Samsung M378B5673EH1-CF8 2GB RAM comparisons
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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Absolute Latency
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RAM 2
CAS Latency (CL) *
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Absolute Latency
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