RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M378B5773DH0-CH9 2GB
G Skill Intl F4-3333C16-8GTZSW 8GB
Compare
Samsung M378B5773DH0-CH9 2GB vs G Skill Intl F4-3333C16-8GTZSW 8GB
Overall score
Samsung M378B5773DH0-CH9 2GB
Overall score
G Skill Intl F4-3333C16-8GTZSW 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M378B5773DH0-CH9 2GB
Report a bug
Reasons to consider
G Skill Intl F4-3333C16-8GTZSW 8GB
Report a bug
Below the latency in the PassMark tests, ns
24
39
Around -63% lower latency
Faster reading speed, GB/s
15.1
11.7
Average value in the tests
Faster write speed, GB/s
11.1
7.2
Average value in the tests
Higher memory bandwidth, mbps
17000
10600
Around 1.6 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M378B5773DH0-CH9 2GB
G Skill Intl F4-3333C16-8GTZSW 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
39
24
Read speed, GB/s
11.7
15.1
Write speed, GB/s
7.2
11.1
Memory bandwidth, mbps
10600
17000
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Clock speed
7-7-7-20 / 1333 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
1749
3045
Samsung M378B5773DH0-CH9 2GB RAM comparisons
Samsung M378B5673FH0-CH9 2GB
Samsung M378B5773CH0-CH9 2GB
G Skill Intl F4-3333C16-8GTZSW 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology CT2K102464BD160B 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M378B5773DH0-CH9 2GB
G Skill Intl F4-3333C16-8GTZSW 8GB
Kingston 99U5584-004.A00LF 4GB
Crucial Technology CT4G4DFS8213.M8FB 4GB
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N
SK Hynix HMT351R7EFR8C-RD 4GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3000 8GB
takeMS International AG TMS2GB264D082-805G 2GB
Samsung M393A1G40EB1-CPB 8GB
Crucial Technology CT51264AC800.C16FC 4GB
Apacer Technology 78.CAGN4.4020B 8GB
Mushkin 991988 (996988) 4GB
Dust Leopard DDR4-2400 C17 8GB 8GB
Team Group Inc. UD5-6400 16GB
Corsair CM4X16GE2666C18S4 16GB
Kingston 99U5474-013.A00LF 2GB
Crucial Technology BLS8G4D240FSC.M16FAD 8GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Micron Technology MTA8ATF1G64HZ-2G3B1 16GB
Kingston 99U5595-005.A00LF 2GB
G Skill Intl F4-3600C17-8GTRG 8GB
ASint Technology SSA302G08-EGN1C 4GB
Corsair CMK32GX4M2A2133C13 16GB
A-DATA Technology VDQVE1B16 2GB
G Skill Intl F4-3200C15-8GTZSW 8GB
Nanya Technology NT2GC64B8HC0NS-CG 2GB
Corsair CMK64GX4M4X4000C18 16GB
Report a bug
×
Bug description
Source link