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Samsung M391B1G73QH0-CMA 8GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TF 4GB
Compare
Samsung M391B1G73QH0-CMA 8GB vs Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TF 4GB
Overall score
Samsung M391B1G73QH0-CMA 8GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TF 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M391B1G73QH0-CMA 8GB
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Below the latency in the PassMark tests, ns
30
37
Around 19% lower latency
Faster reading speed, GB/s
10.9
9.5
Average value in the tests
Faster write speed, GB/s
9.1
7.7
Average value in the tests
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TF 4GB
Report a bug
Higher memory bandwidth, mbps
17000
14200
Around 1.2 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M391B1G73QH0-CMA 8GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TF 4GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
30
37
Read speed, GB/s
10.9
9.5
Write speed, GB/s
9.1
7.7
Memory bandwidth, mbps
14200
17000
Other
Description
PC3-14200, 1.5V, CAS Supported: 6 7 8 9 10 11 13
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
Timings / Clock speed
no data
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2272
1949
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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Absolute Latency
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RAM 2
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Absolute Latency
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