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Samsung M393A1G40DB0-CPB 8GB
Avexir Technologies Corporation DDR4-2666 CL17 4GB 4GB

Samsung M393A1G40DB0-CPB 8GB vs Avexir Technologies Corporation DDR4-2666 CL17 4GB 4GB

Overall score
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Samsung M393A1G40DB0-CPB 8GB

Samsung M393A1G40DB0-CPB 8GB

Overall score
star star star star star
Avexir Technologies Corporation DDR4-2666 CL17 4GB 4GB

Avexir Technologies Corporation DDR4-2666 CL17 4GB 4GB

Differences Specifications Comments

Differences

Samsung M393A1G40DB0-CPB 8GB Reasons to consider
Samsung M393A1G40DB0-CPB 8GB
Report a bug
Avexir Technologies Corporation DDR4-2666 CL17 4GB 4GB Reasons to consider
Avexir Technologies Corporation DDR4-2666 CL17 4GB 4GB
Report a bug
  • Below the latency in the PassMark tests, ns
    23 left arrow 49
    Around -113% lower latency
  • Faster reading speed, GB/s
    17 left arrow 10.9
    Average value in the tests
  • Faster write speed, GB/s
    12.9 left arrow 8.7
    Average value in the tests

Specifications

Complete list of technical specifications
Samsung M393A1G40DB0-CPB 8GB
Avexir Technologies Corporation DDR4-2666 CL17 4GB 4GB
Main characteristics
  • Memory type
    DDR4 left arrow DDR4
  • Latency in PassMark, ns
    49 left arrow 23
  • Read speed, GB/s
    10.9 left arrow 17.0
  • Write speed, GB/s
    8.7 left arrow 12.9
  • Memory bandwidth, mbps
    17000 left arrow 17000
Other
  • Description
    PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16 left arrow PC4-17000, 1.2V, CAS Supported: 12 14 15 16
  • Timings / Clock speed
    14-14-14, 15-15-15, 16-16-16 / 2133 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • Ranking PassMark (The more the better)
    2427 left arrow 2938

Samsung M393A1G40DB0-CPB 8GB RAM comparisons

Kingston 99U5403-036.A00G 4GB
Kingston 9905403-156.A00LF 2GB

Avexir Technologies Corporation DDR4-2666 CL17 4GB 4GB RAM comparisons

Patriot Memory (PDP Systems) PSD34G16002 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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