RAM comparison Samsung M395T2863QZ4-CF76 1GB vs Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2400AH 8GB

Samsung M395T2863QZ4-CF76 1GB vs Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2400AH 8GB

Overall score

Samsung M395T2863QZ4-CF76 1GB

Overall score

Differences Specifications Comments

Reasons to consider
Samsung M395T2863QZ4-CF76 1GB

Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2400AH 8GB

Below the latency in the PassMark tests, ns

25 104

Around -316% lower latency
Faster write speed, GB/s

7.4 2,404.5

Average value in the tests
Higher memory bandwidth, mbps

19200 6400

Around 3 higher bandwidth

Complete list of technical specifications

Samsung M395T2863QZ4-CF76 1GB

Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2400AH 8GB

Main characteristics

Other

Description

PC-6400, PS1: 1.5V, PS2: 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
Timings / Clock speed

no data 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)

786 2104

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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