RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M395T2863QZ4-CF76 1GB
Hynix Semiconductor (Hyundai Electronics) HMA851U6AFR6N-UH 4GB
Compare
Samsung M395T2863QZ4-CF76 1GB vs Hynix Semiconductor (Hyundai Electronics) HMA851U6AFR6N-UH 4GB
Overall score
Samsung M395T2863QZ4-CF76 1GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMA851U6AFR6N-UH 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M395T2863QZ4-CF76 1GB
Report a bug
Below the latency in the PassMark tests, ns
104
122
Around 15% lower latency
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMA851U6AFR6N-UH 4GB
Report a bug
Faster reading speed, GB/s
9.4
3
Average value in the tests
Faster write speed, GB/s
5.8
2,404.5
Average value in the tests
Higher memory bandwidth, mbps
19200
6400
Around 3 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M395T2863QZ4-CF76 1GB
Hynix Semiconductor (Hyundai Electronics) HMA851U6AFR6N-UH 4GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
104
122
Read speed, GB/s
3,192.0
9.4
Write speed, GB/s
2,404.5
5.8
Memory bandwidth, mbps
6400
19200
Other
Description
PC-6400, PS1: 1.5V, PS2: 1.8V, CAS Supported: 4 5 6
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
no data
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
786
1411
Samsung M395T2863QZ4-CF76 1GB RAM comparisons
takeMS International AG TMS2GS264D081805AV 2GB
Micron Technology 8HTF12864HDZ-800E1 1GB
Hynix Semiconductor (Hyundai Electronics) HMA851U6AFR6N-UH 4GB RAM comparisons
A-DATA Technology AD73I1C1674EV 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M395T2863QZ4-CF76 1GB
Hynix Semiconductor (Hyundai Electronics) HMA851U6AFR6N
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Kingston KP6FH5-MIE 32GB
Samsung M471B1G73DB0-YK0 8GB
Super Talent F24EA8GS 8GB
Kingston 99U5471-030.A00LF 8GB
Transcend Information TS2GSH64V1B 16GB
Kingston 9905471-006.A01LF 4GB
G Skill Intl F4-4266C17-16GVKB 16GB
Kingston KHX2800C14D4/8GX 8GB
Crucial Technology BLS16G4D30AESB.M16FE 16GB
Corsair CMZ16GX3M2A2400C10 8GB
A-DATA Technology DDR4 2666 8GB
Ramaxel Technology RMT3160ED58E9W1600 4GB
DSL Memory D4SS1G081SH24A-A 8GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
Corsair CMK32GX4M4B3200C16 8GB
SK Hynix HMT325S6CFR8C-H9 2GB
Crucial Technology CT8G4DFS8266.C8FJ 8GB
Kingston 9965516-112.A00LF 16GB
Kingston 9905702-119.A00G 8GB
SK Hynix DDR2 800 2G 2GB
Crucial Technology CT8G4DFS8266.M8FH 8GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
Crucial Technology CT8G4DFD8213.C16FBR2 8GB
Kingston KHX2133C11D3/4GX 4GB
SK Hynix HMA41GR7AFR8N-TF 8GB
Report a bug
×
Bug description
Source link