RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M395T2863QZ4-CF76 1GB
OM Nanotech Pvt.Ltd V1D4L816GB2G82G83200 16GB
Compare
Samsung M395T2863QZ4-CF76 1GB vs OM Nanotech Pvt.Ltd V1D4L816GB2G82G83200 16GB
Overall score
Samsung M395T2863QZ4-CF76 1GB
Overall score
OM Nanotech Pvt.Ltd V1D4L816GB2G82G83200 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M395T2863QZ4-CF76 1GB
Report a bug
Faster reading speed, GB/s
3
16
Average value in the tests
Faster write speed, GB/s
2,404.5
10.6
Average value in the tests
Reasons to consider
OM Nanotech Pvt.Ltd V1D4L816GB2G82G83200 16GB
Report a bug
Below the latency in the PassMark tests, ns
30
104
Around -247% lower latency
Higher memory bandwidth, mbps
25600
6400
Around 4 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M395T2863QZ4-CF76 1GB
OM Nanotech Pvt.Ltd V1D4L816GB2G82G83200 16GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
104
30
Read speed, GB/s
3,192.0
16.0
Write speed, GB/s
2,404.5
10.6
Memory bandwidth, mbps
6400
25600
Other
Description
PC-6400, PS1: 1.5V, PS2: 1.8V, CAS Supported: 4 5 6
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
Timings / Clock speed
no data
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
Ranking PassMark (The more the better)
786
3026
Samsung M395T2863QZ4-CF76 1GB RAM comparisons
takeMS International AG TMS2GS264D081805AV 2GB
Micron Technology 8HTF12864HDZ-800E1 1GB
OM Nanotech Pvt.Ltd V1D4L816GB2G82G83200 16GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Nanya Technology NT4GC72B4NA1NL-CG 4GB
G Skill Intl F4-3200C16-16GVR 16GB
SK Hynix HMT325S6CFR8C-H9 2GB
Hewlett-Packard 7EH98AA#ABB 8GB
Kingston ACR512X64D3S13C9G 4GB
Crucial Technology CT4G4DFS824A.C8FE 4GB
Kingston K1N7HK-ELC 2GB
Micron Technology 16ATF1G64AZ-2G3A2 8GB
Kingston 99P5471-002.A00LF 2GB
Avant Technology J641GU42J5213ND 8GB
TwinMOS 8DPT5MK8-TATP 2GB
Corsair CMV16GX4M1A2666C18 16GB
SK Hynix HYMP512S64CP8-Y5 1GB
Samsung M393A2K40BB2-CTD 16GB
SK Hynix HMT41GS6AFR8A-PB 8GB
Corsair CMSX16GX4M2A3000C18 8GB
SK Hynix HMT41GU7MFR8A-H9 8GB
Xinshirui (Shenzhen) Electronics Co V01D4LF8GB528528266
G Skill Intl F2-8500CL5-2GBPI 2GB
Chun Well Technology Holding Limited CL18-20-20 D4-3600
A-DATA Technology DDR4 2666 8GB
Corsair CMSO4GX4M1A2133C15 4GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Crucial Technology BLS8G4D26BFSCK.8FBD 8GB
A-DATA Technology VDQVE1B16 2GB
Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N
Samsung 1600 CL10 Series 8GB
Mushkin MR[A/B]4U300JJJM8G 8GB
Report a bug
×
Bug description
Source link