RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M395T2863QZ4-CF76 1GB
OM Nanotech Pvt.Ltd V1D4L816GB2G82G83200 16GB
Compare
Samsung M395T2863QZ4-CF76 1GB vs OM Nanotech Pvt.Ltd V1D4L816GB2G82G83200 16GB
Overall score
Samsung M395T2863QZ4-CF76 1GB
Overall score
OM Nanotech Pvt.Ltd V1D4L816GB2G82G83200 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M395T2863QZ4-CF76 1GB
Report a bug
Faster reading speed, GB/s
3
16
Average value in the tests
Faster write speed, GB/s
2,404.5
10.6
Average value in the tests
Reasons to consider
OM Nanotech Pvt.Ltd V1D4L816GB2G82G83200 16GB
Report a bug
Below the latency in the PassMark tests, ns
30
104
Around -247% lower latency
Higher memory bandwidth, mbps
25600
6400
Around 4 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M395T2863QZ4-CF76 1GB
OM Nanotech Pvt.Ltd V1D4L816GB2G82G83200 16GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
104
30
Read speed, GB/s
3,192.0
16.0
Write speed, GB/s
2,404.5
10.6
Memory bandwidth, mbps
6400
25600
Other
Description
PC-6400, PS1: 1.5V, PS2: 1.8V, CAS Supported: 4 5 6
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
Timings / Clock speed
no data
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
Ranking PassMark (The more the better)
786
3026
Samsung M395T2863QZ4-CF76 1GB RAM comparisons
takeMS International AG TMS2GS264D081805AV 2GB
Micron Technology 8HTF12864HDZ-800E1 1GB
OM Nanotech Pvt.Ltd V1D4L816GB2G82G83200 16GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M395T2863QZ4-CF76 1GB
OM Nanotech Pvt.Ltd V1D4L816GB2G82G83200 16GB
Kingston 99U5428-063.A00LF 8GB
Kingston X3XCFP-HYA 8GB
Kingston 99U5469-045.A00LF 4GB
Kingston KHX2666C16/16G 16GB
Samsung M471B5273EB0-CK0 4GB
G Skill Intl F4-3000C16-8GTZN 8GB
AMD R5S38G1601U2S 8GB
Micron Technology 4ATF51264HZ-2G3E1 4GB
Samsung M393B1K70CH0-YH9 8GB
A-DATA Technology AM2P24HC4R1-BUPS 4GB
Samsung 1600 CL10 Series 8GB
Apacer Technology GD2.1542WS.001 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Samsung M378A1K43BB2-CTD 8GB
G Skill Intl F3-1866C8-8GTX 8GB
Kingston 9905713-019.A00G 4GB
SK Hynix HYMP112U64CP8-Y5 1GB
Micron Technology 18ADF2G72PZ-2G3B1 16GB
Kingston KHX1866C10D3/4G 4GB
Corsair CM4X8GF2133C13K4 8GB
Smart Modular SG564568FG8N6KF-Z2 2GB
Hypertec G2RT-4AFT00 16GB
TwinMOS 9DNPBNZB-TATP 4GB
G Skill Intl F4-3200C14-16GTZ 16GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Corsair CMK64GX4M8Z2933C16 8GB
Report a bug
×
Bug description
Source link