RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M395T2863QZ4-CF76 1GB
Shenzhen Xingmem Technology Corp CM4X8GF2666C1XMP 8GB
Compare
Samsung M395T2863QZ4-CF76 1GB vs Shenzhen Xingmem Technology Corp CM4X8GF2666C1XMP 8GB
Overall score
Samsung M395T2863QZ4-CF76 1GB
Overall score
Shenzhen Xingmem Technology Corp CM4X8GF2666C1XMP 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M395T2863QZ4-CF76 1GB
Report a bug
Faster reading speed, GB/s
3
14.5
Average value in the tests
Reasons to consider
Shenzhen Xingmem Technology Corp CM4X8GF2666C1XMP 8GB
Report a bug
Below the latency in the PassMark tests, ns
71
104
Around -46% lower latency
Faster write speed, GB/s
8.0
2,404.5
Average value in the tests
Higher memory bandwidth, mbps
21300
6400
Around 3.33 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M395T2863QZ4-CF76 1GB
Shenzhen Xingmem Technology Corp CM4X8GF2666C1XMP 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
104
71
Read speed, GB/s
3,192.0
14.5
Write speed, GB/s
2,404.5
8.0
Memory bandwidth, mbps
6400
21300
Other
Description
PC-6400, PS1: 1.5V, PS2: 1.8V, CAS Supported: 4 5 6
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
no data
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
786
1863
Samsung M395T2863QZ4-CF76 1GB RAM comparisons
takeMS International AG TMS2GS264D081805AV 2GB
Micron Technology 8HTF12864HDZ-800E1 1GB
Shenzhen Xingmem Technology Corp CM4X8GF2666C1XMP 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
SK Hynix HMA451U6AFR8N-TF 4GB
Corsair CMW16GX4M2E3200C16 8GB
Elpida EBJ40EG8BFWB-JS-F 4GB
Crucial Technology BL16G32C16U4B.16FE 16GB
Kingston 9965525-018.A00LF 4GB
Transcend Information TS1GLH64V4B 8GB
PNY Electronics PNY 2GB
Crucial Technology BLS4G4D240FSA.8FADG 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
G Skill Intl F4-3600C17-8GTRS 8GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Samsung M471A1K43DB1-CTD 8GB
Samsung M395T2863QZ4-CF76 1GB
Apacer Technology GD2.1542WS.003 8GB
Samsung M393B1K70QB0-CK0 8GB
Kingston ACR26D4S9D8ME-16 16GB
AMD AE34G2139U2 4GB
Hynix Semiconductor (Hyundai Electronics) HMA451U7MFR8N
Samsung M4 70T2864QZ3-CF7 1GB
Essencore Limited IM48GU88N24-FFFHMB 8GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
Kingston ACR24D4U7D8MB-16 16GB
Kingston KVR533D2N4 512MB
SK Hynix HMAA2GU6AJR8N-XN 16GB
Corsair CM3X8GA2400C11Y2R 8GB
G Skill Intl F4-4000C19-16GTZSW 16GB
Kingston KVR16N11/8-SP 8GB
Patriot Memory (PDP Systems) PSD38G13332 8GB
Report a bug
×
Bug description
Source link