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Samsung M4 70T2953EZ3-CE6 1GB
SK Hynix HYMP125S64CP8-S6 2GB
Compare
Samsung M4 70T2953EZ3-CE6 1GB vs SK Hynix HYMP125S64CP8-S6 2GB
Overall score
Samsung M4 70T2953EZ3-CE6 1GB
Overall score
SK Hynix HYMP125S64CP8-S6 2GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M4 70T2953EZ3-CE6 1GB
Report a bug
Reasons to consider
SK Hynix HYMP125S64CP8-S6 2GB
Report a bug
Below the latency in the PassMark tests, ns
68
73
Around -7% lower latency
Faster reading speed, GB/s
4
3
Average value in the tests
Faster write speed, GB/s
2,013.5
1,423.3
Average value in the tests
Higher memory bandwidth, mbps
6400
5300
Around 1.21 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M4 70T2953EZ3-CE6 1GB
SK Hynix HYMP125S64CP8-S6 2GB
Main characteristics
Memory type
DDR2
DDR2
Latency in PassMark, ns
73
68
Read speed, GB/s
3,510.5
4,402.8
Write speed, GB/s
1,423.3
2,013.5
Memory bandwidth, mbps
5300
6400
Other
Description
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
Timings / Clock speed
5-5-5-15 / 667 MHz
5-5-5-15 / 800 MHz
Ranking PassMark (The more the better)
476
701
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
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