RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M4 70T5663CZ3-CE6 2GB
Micron Technology 4ATF51264AZ-2G3E1 4GB
Compare
Samsung M4 70T5663CZ3-CE6 2GB vs Micron Technology 4ATF51264AZ-2G3E1 4GB
Overall score
Samsung M4 70T5663CZ3-CE6 2GB
Overall score
Micron Technology 4ATF51264AZ-2G3E1 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M4 70T5663CZ3-CE6 2GB
Report a bug
Faster reading speed, GB/s
3
15
Average value in the tests
Reasons to consider
Micron Technology 4ATF51264AZ-2G3E1 4GB
Report a bug
Below the latency in the PassMark tests, ns
27
69
Around -156% lower latency
Faster write speed, GB/s
10.9
1,441.2
Average value in the tests
Higher memory bandwidth, mbps
19200
5300
Around 3.62 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M4 70T5663CZ3-CE6 2GB
Micron Technology 4ATF51264AZ-2G3E1 4GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
69
27
Read speed, GB/s
3,325.1
15.0
Write speed, GB/s
1,441.2
10.9
Memory bandwidth, mbps
5300
19200
Other
Description
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
Timings / Clock speed
5-5-5-15 / 667 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
525
2288
Samsung M4 70T5663CZ3-CE6 2GB RAM comparisons
Samsung M4 70T5663QZ3-CE6 2GB
Nanya Technology NT2GT64U8HD0BN-3C 2GB
Micron Technology 4ATF51264AZ-2G3E1 4GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Samsung M393B1K70CH0-CH9 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Kingston ACR256X64D3S1333C9 2GB
Crucial Technology CT8G4DFS824A.C8FDD1 8GB
Team Group Inc. Vulcan-1600 4GB
Crucial Technology BLS8G4D26BFSCK.8FD 8GB
Samsung M471B1G73QH0-YK0 8GB
Lexar Co Limited LD4AS016G-H3200GST 16GB
Samsung M393B1K70CH0-CH9 8GB
AMD R7416G2133U2S 16GB
Samsung M471B5273CH0-CH9 4GB
Chun Well Technology Holding Limited CL16-18-18 D4-3000
Lexar Co Limited LD4AU016G-H3200GST 16GB
G Skill Intl F4-3466C16-16GTZSW 16GB
Kingston 9965516-430.A00G 16GB
Corsair CMK128GX4M8A2400C14 16GB
Corsair CMX4GX3M1A1333C9 4GB
Crucial Technology BLS8G4D240FSB.16FBD 8GB
Corsair CMX4GX3M1A1333C9 4GB
G Skill Intl F4-3600C16-8GVKC 8GB
Samsung M471B1G73DB0-YK0 8GB
Crucial Technology BLT4G4D26AFTA.8FBD 4GB
Samsung M378T5663QZ3-CF7 2GB
G Skill Intl F4-4200C19-4GTZ 4GB
Samsung M471B5273CH0-CH9 4GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6MFR8N
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Kingston 9965640-006.A01G 32GB
Kingston 99U5584-017.A00LF 4GB
Corsair CMD16GX4M4B3200C16 4GB
Report a bug
×
Bug description
Source link