Samsung M4 70T5663CZ3-CE6 2GB vs Micron Technology 4ATF51264AZ-2G3E1 4GB

Pontuação geral

Samsung M4 70T5663CZ3-CE6 2GB

Samsung M4 70T5663CZ3-CE6 2GB

Pontuação geral

Micron Technology 4ATF51264AZ-2G3E1 4GB

Micron Technology 4ATF51264AZ-2G3E1 4GB

Diferenças Especificações Comentários

Diferenças

Samsung M4 70T5663CZ3-CE6 2GB

Razões a considerar
Samsung M4 70T5663CZ3-CE6 2GB

Relatar um erro

Velocidade de leitura mais rápida, GB/s

3 15

Valor médio nos testes

Micron Technology 4ATF51264AZ-2G3E1 4GB

Razões a considerar
Micron Technology 4ATF51264AZ-2G3E1 4GB

Relatar um erro

Abaixo da latência nos testes do PassMark, ns

27 69

Por volta de -156% menor latência
Velocidade de escrita mais rápida, GB/s

10.9 1,441.2

Valor médio nos testes
Maior largura de banda de memória, mbps

19200 5300

Por volta de 3.62 maior largura de banda

Especificações

Lista completa de especificações técnicas

Samsung M4 70T5663CZ3-CE6 2GB

Micron Technology 4ATF51264AZ-2G3E1 4GB

Características principais

Tipo de memória

DDR2 DDR4
Latência em PassMark, ns

69 27
Velocidade de leitura, GB/s

3,325.1 15.0
Velocidade de escrita, GB/s

1,441.2 10.9
Largura de banda de memória, mbps

5300 19200

Other

Descrição

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
Tempos / Velocidade do relógio

5-5-5-15 / 667 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (Quanto mais, melhor)

525 2288

RAM Latency Calculator

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