RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M4 70T5663QZ3-CE6 2GB
Micron Technology 4ATF51264HZ-2G6E1 4GB
Compare
Samsung M4 70T5663QZ3-CE6 2GB vs Micron Technology 4ATF51264HZ-2G6E1 4GB
Overall score
Samsung M4 70T5663QZ3-CE6 2GB
Overall score
Micron Technology 4ATF51264HZ-2G6E1 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M4 70T5663QZ3-CE6 2GB
Report a bug
Faster reading speed, GB/s
3
14.2
Average value in the tests
Reasons to consider
Micron Technology 4ATF51264HZ-2G6E1 4GB
Report a bug
Below the latency in the PassMark tests, ns
38
68
Around -79% lower latency
Faster write speed, GB/s
10.3
1,702.6
Average value in the tests
Higher memory bandwidth, mbps
21300
5300
Around 4.02 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M4 70T5663QZ3-CE6 2GB
Micron Technology 4ATF51264HZ-2G6E1 4GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
68
38
Read speed, GB/s
3,886.6
14.2
Write speed, GB/s
1,702.6
10.3
Memory bandwidth, mbps
5300
21300
Other
Description
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
Timings / Clock speed
5-5-5-15 / 667 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
654
2148
Samsung M4 70T5663QZ3-CE6 2GB RAM comparisons
SK Hynix HYMP125U64CP8-S6 2GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Micron Technology 4ATF51264HZ-2G6E1 4GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology CT51264BD1339.M16F 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M386B4G70DM0-CMA4 32GB
Micron Technology 16ATF1G64AZ-2G3A2 8GB
Samsung M4 70T5663QZ3-CE6 2GB
Kingston KHX2133C14S4/16G 16GB
Corsair CM2X1024-6400C4 1GB
Corsair CMW64GX4M2D3600C18 32GB
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Chun Well Technology Holding Limited ND4U0840180BRPDE 8
Essencore Limited KD48GU88C-26N1600 8GB
Kingston 9905712-035.A00G 16GB
Samsung M3 78T5663RZ3-CF7 2GB
Corsair CMWX8GD3200C16W4 8GB
Apacer Technology 78.01GA0.9K5 1GB
Kingston HP26D4S9S8ME-8 8GB
Samsung M4 70T5663QZ3-CE6 2GB
Crucial Technology BLE8G4D26AFEA.16FBD 8GB
Samsung M393B5270CH0-CH9 4GB
Crucial Technology BL16G32C16U4B.M8FB1 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Avant Technology W641GU42J9266NC 8GB
Kingston 99U5595-005.A00LF 2GB
SK Hynix HMA41GU7AFR8N-TF 8GB
Kingston KVR16N11/8-SP 8GB
Micron Technology 18ASF2G72AZ-2G3B1 16GB
Samsung M4 70T5663QZ3-CE6 2GB
Corsair CMD16GX4M4C3200C16 4GB
Samsung M4 70T2864QZ3-CF7 1GB
Crucial Technology CT32G4SFD8266.C16FE 32GB
Report a bug
×
Bug description
Source link