Samsung M471A1G44AB0-CWE 8GB
Hynix Semiconductor (Hyundai Electronics) HMA851S6CJR6N-UH 4GB

Samsung M471A1G44AB0-CWE 8GB vs Hynix Semiconductor (Hyundai Electronics) HMA851S6CJR6N-UH 4GB

Overall score
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Samsung M471A1G44AB0-CWE 8GB

Samsung M471A1G44AB0-CWE 8GB

Overall score
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMA851S6CJR6N-UH 4GB

Hynix Semiconductor (Hyundai Electronics) HMA851S6CJR6N-UH 4GB

Differences

  • Higher memory bandwidth, mbps
    25600 left arrow 19200
    Around 1.33% higher bandwidth
  • Below the latency in the PassMark tests, ns
    26 left arrow 50
    Around -92% lower latency
  • Faster reading speed, GB/s
    15.6 left arrow 15.3
    Average value in the tests
  • Faster write speed, GB/s
    11.8 left arrow 10.9
    Average value in the tests

Specifications

Complete list of technical specifications
Samsung M471A1G44AB0-CWE 8GB
Hynix Semiconductor (Hyundai Electronics) HMA851S6CJR6N-UH 4GB
Main characteristics
  • Memory type
    DDR4 left arrow DDR4
  • Latency in PassMark, ns
    50 left arrow 26
  • Read speed, GB/s
    15.3 left arrow 15.6
  • Write speed, GB/s
    10.9 left arrow 11.8
  • Memory bandwidth, mbps
    25600 left arrow 19200
Other
  • Description
    PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • Timings / Clock speed
    20-20-20, 22-22-22, 24-24-24 / 3200 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • Ranking PassMark (The more the better)
    2512 left arrow 2382
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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