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Samsung M471A5244CB0-CWE 4GB
Micron Technology 9ASF1G72PZ-2G9E1 8GB
Compare
Samsung M471A5244CB0-CWE 4GB vs Micron Technology 9ASF1G72PZ-2G9E1 8GB
Overall score
Samsung M471A5244CB0-CWE 4GB
Overall score
Micron Technology 9ASF1G72PZ-2G9E1 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M471A5244CB0-CWE 4GB
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Below the latency in the PassMark tests, ns
38
54
Around 30% lower latency
Faster reading speed, GB/s
15.5
10.4
Average value in the tests
Faster write speed, GB/s
12.0
8.2
Average value in the tests
Higher memory bandwidth, mbps
25600
23400
Around 1.09% higher bandwidth
Reasons to consider
Micron Technology 9ASF1G72PZ-2G9E1 8GB
Report a bug
Specifications
Complete list of technical specifications
Samsung M471A5244CB0-CWE 4GB
Micron Technology 9ASF1G72PZ-2G9E1 8GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
38
54
Read speed, GB/s
15.5
10.4
Write speed, GB/s
12.0
8.2
Memory bandwidth, mbps
25600
23400
Other
Description
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
PC4-23400, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 26
Timings / Clock speed
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
19-19-19, 20-20-20, 21-21-21, 22-22-22 / 2933 MHz
Ranking PassMark (The more the better)
2283
2259
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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Absolute Latency
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RAM 2
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Absolute Latency
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