RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M471B5273EB0-CK0 4GB
Crucial Technology BLE16G4D30AEEA.K16FB 16GB
Compare
Samsung M471B5273EB0-CK0 4GB vs Crucial Technology BLE16G4D30AEEA.K16FB 16GB
Overall score
Samsung M471B5273EB0-CK0 4GB
Overall score
Crucial Technology BLE16G4D30AEEA.K16FB 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M471B5273EB0-CK0 4GB
Report a bug
Reasons to consider
Crucial Technology BLE16G4D30AEEA.K16FB 16GB
Report a bug
Below the latency in the PassMark tests, ns
20
40
Around -100% lower latency
Faster reading speed, GB/s
18.9
12.3
Average value in the tests
Faster write speed, GB/s
12.6
8.9
Average value in the tests
Higher memory bandwidth, mbps
17000
12800
Around 1.33 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M471B5273EB0-CK0 4GB
Crucial Technology BLE16G4D30AEEA.K16FB 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
40
20
Read speed, GB/s
12.3
18.9
Write speed, GB/s
8.9
12.6
Memory bandwidth, mbps
12800
17000
Other
Description
PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 17 18 19
Timings / Clock speed
9-9-9-24 / 1600 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
1789
3244
Samsung M471B5273EB0-CK0 4GB RAM comparisons
A-DATA Technology AD73I1C1674EV 4GB
Samsung M378B1G73DB0-CK0 8GB
Crucial Technology BLE16G4D30AEEA.K16FB 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Golden Empire 1GB DDR2 800 CAS=4 1GB
Corsair CMK16GX4M2B3600C18 8GB
PNY Electronics PNY 2GB
Mushkin MR[A/B]4U320LLLM16G 16GB
Micron Technology 18HTF12872AY-800F1 1GB
Apacer Technology 78.C1GMM.AUW0C 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
GIGA - BYTE Technology Co Ltd GP-ARS16G44 8GB
Micron Technology 16JSF25664HZ-1G1F1 2GB
G Skill Intl F4-3000C15-8GRBB 8GB
Kingston 9905403-011.A03LF 2GB
Kingston KHYXPX-MIE 8GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Crucial Technology CT8G4DFS824A.M8FA 8GB
Crucial Technology CT8G4DFD824A.M16FB 8GB
Crucial Technology CT8G4DFS824A.C8FAD1 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Crucial Technology CB4GU2400.M8E 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Kingston KP6FH5-MIE 32GB
G Skill Intl F4-4000C14-16GTZR 16GB
SK Hynix HMA81GU6MFR8N-UH 8GB
Nanya Technology M2X4G64CB8HG5N-DG 4GB
Avexir Technologies Corporation DDR4-3000 CL16 4GB 4GB
Essencore Limited KD48GU88C-26N1600 8GB
Kingston 9905702-150.A00G 8GB
Samsung 1600 CL10 Series 8GB
Micron Technology 36ASF4G72PZ-2G6H1 32GB
Report a bug
×
Bug description
Source link