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Samsung M471B5773DH0-CH9 2GB
ASint Technology SSZ3128M8-EDJ1D 2GB
Compare
Samsung M471B5773DH0-CH9 2GB vs ASint Technology SSZ3128M8-EDJ1D 2GB
Overall score
Samsung M471B5773DH0-CH9 2GB
Overall score
ASint Technology SSZ3128M8-EDJ1D 2GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M471B5773DH0-CH9 2GB
Report a bug
Reasons to consider
ASint Technology SSZ3128M8-EDJ1D 2GB
Report a bug
Below the latency in the PassMark tests, ns
28
43
Around -54% lower latency
Faster reading speed, GB/s
11.6
11
Average value in the tests
Faster write speed, GB/s
8.1
7.2
Average value in the tests
Specifications
Complete list of technical specifications
Samsung M471B5773DH0-CH9 2GB
ASint Technology SSZ3128M8-EDJ1D 2GB
Main characteristics
Memory type
DDR3
DDR3
Latency in PassMark, ns
43
28
Read speed, GB/s
11.0
11.6
Write speed, GB/s
7.2
8.1
Memory bandwidth, mbps
10600
10600
Other
Description
PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
Timings / Clock speed
7-7-7-20 / 1333 MHz
7-7-7-20 / 1333 MHz
Ranking PassMark (The more the better)
1393
1635
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
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Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
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