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Samsung M471B5773DH0-CH9 2GB
ASint Technology SSZ3128M8-EDJ1D 2GB

Samsung M471B5773DH0-CH9 2GB vs ASint Technology SSZ3128M8-EDJ1D 2GB

总分
star star star star star
Samsung M471B5773DH0-CH9 2GB

Samsung M471B5773DH0-CH9 2GB

总分
star star star star star
ASint Technology SSZ3128M8-EDJ1D 2GB

ASint Technology SSZ3128M8-EDJ1D 2GB

差异 规格 评论

差异

Samsung M471B5773DH0-CH9 2GB 需要考虑的原因
Samsung M471B5773DH0-CH9 2GB
报告一个错误
ASint Technology SSZ3128M8-EDJ1D 2GB 需要考虑的原因
ASint Technology SSZ3128M8-EDJ1D 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 43
    左右 -54% 更低的延时
  • 更快的读取速度，GB/s
    11.6 left arrow 11
    测试中的平均数值
  • 更快的写入速度，GB/s
    8.1 left arrow 7.2
    测试中的平均数值

规格

完整的技术规格清单
Samsung M471B5773DH0-CH9 2GB
ASint Technology SSZ3128M8-EDJ1D 2GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR3
  • PassMark中的延时，ns
    43 left arrow 28
  • 读取速度，GB/s
    11.0 left arrow 11.6
  • 写入速度，GB/s
    7.2 left arrow 8.1
  • 内存带宽，mbps
    10600 left arrow 10600
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC3-10600, 1.5V, CAS Supported: 6 7 8 9
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 7-7-7-20 / 1333 MHz
  • 排名PassMark (越多越好)
    1393 left arrow 1635

Samsung M471B5773DH0-CH9 2GB RAM的比较

Samsung M471B5273DH0-CH9 4GB
Samsung M471B5273CH0-CH9 4GB

ASint Technology SSZ3128M8-EDJ1D 2GB RAM的比较

Kingston ACR256X64D3S1333C9 2GB
Elpida EBJ41UF8BCS0-DJ-F 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M471B5773DH0-CH9 2GB
Samsung M471B5773DH0-CH9 2GB
ASint Technology SSZ3128M8-EDJ1D 2GB
ASint Technology SSZ3128M8-EDJ1D 2GB
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