SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
Hynix Semiconductor (Hyundai Electronics) HMT35151BFR8C-H9 4GB

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB vs Hynix Semiconductor (Hyundai Electronics) HMT35151BFR8C-H9 4GB

Overall score
star star star star star
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

Overall score
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMT35151BFR8C-H9 4GB

Hynix Semiconductor (Hyundai Electronics) HMT35151BFR8C-H9 4GB

Differences

  • Faster reading speed, GB/s
    14.2 left arrow 7.9
    Average value in the tests
  • Faster write speed, GB/s
    13.6 left arrow 4.4
    Average value in the tests
  • Higher memory bandwidth, mbps
    21300 left arrow 10600
    Around 2.01% higher bandwidth
  • Below the latency in the PassMark tests, ns
    28 left arrow 46
    Around -64% lower latency

Specifications

Complete list of technical specifications
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
Hynix Semiconductor (Hyundai Electronics) HMT35151BFR8C-H9 4GB
Main characteristics
  • Memory type
    DDR4 left arrow DDR3
  • Latency in PassMark, ns
    46 left arrow 28
  • Read speed, GB/s
    14.2 left arrow 7.9
  • Write speed, GB/s
    13.6 left arrow 4.4
  • Memory bandwidth, mbps
    21300 left arrow 10600
Other
  • Description
    PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 left arrow PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
  • Timings / Clock speed
    17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz left arrow 7-7-7-20 / 1333 MHz
  • Ranking PassMark (The more the better)
    2717 left arrow 1291
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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