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SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
Hynix Semiconductor (Hyundai Electronics) HMT35151BFR8C-H9 4GB
Compare
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB vs Hynix Semiconductor (Hyundai Electronics) HMT35151BFR8C-H9 4GB
Overall score
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMT35151BFR8C-H9 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
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Faster reading speed, GB/s
14.2
7.9
Average value in the tests
Faster write speed, GB/s
13.6
4.4
Average value in the tests
Higher memory bandwidth, mbps
21300
10600
Around 2.01% higher bandwidth
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMT35151BFR8C-H9 4GB
Report a bug
Below the latency in the PassMark tests, ns
28
46
Around -64% lower latency
Specifications
Complete list of technical specifications
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
Hynix Semiconductor (Hyundai Electronics) HMT35151BFR8C-H9 4GB
Main characteristics
Memory type
DDR4
DDR3
Latency in PassMark, ns
46
28
Read speed, GB/s
14.2
7.9
Write speed, GB/s
13.6
4.4
Memory bandwidth, mbps
21300
10600
Other
Description
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
Timings / Clock speed
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
7-7-7-20 / 1333 MHz
Ranking PassMark (The more the better)
2717
1291
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
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Absolute Latency
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RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
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Absolute Latency
0 ns
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